advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -20v small package outline r ds(on) 130m surface mount device i d - 2.6a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice 1 AP2301GN-HF rating - 20 + 12 -2.6 0.01 halogen-free product continuous drain current 3 -2.1 pulsed drain current 1 -10 thermal data parameter total power dissipation operating junction temperature range storage temperature range 200902046 parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 linear derating factor 1.38 -55 to 150 advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the sot-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23
AP2301GN-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-5v, i d =-2.8a - - 130 m ? ? , ? source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =-1.2v - - -1 a i sm pulsed source current ( body diode ) 1 - - -10 a v sd forward on voltage 2 t j =25 notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 a p2301gn-hf 0 2 4 6 8 10 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c v gs = -5v v gs = -4v v gs = -3v v gs = -2v 0 2 4 6 8 10 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c v gs = -5v v gs = -4v v gs = -3v v gs = -2v 80 120 160 200 240 0246810 -v gs , gate-to-source voltage (v) r ds(on) ( ) i d = -2a t a =25 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2.8a v gs = -5v 0 1 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
AP2301GN-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270 0 1 2 3 4 5 0123456 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2a v ds = -16v 10 100 1000 1 5 9 13 17 21 25 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g q gs q gd q g charge -4.5v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 1ms 10ms 100ms 1s dc t a =25 c single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
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